1550nm Thin film LiNbO3 electro-optic modulator chip(U type)
1、 Product introduction
The LiNbO3 thin film (LNOI) material on the insulating layer not only inherits the excellent photoelectric properties of the bulk material LiNbO3, but also provides a new scheme for the LiNbO3 modulator chip with integration, small size and high modulation efficiency. As shown in Figure 1. The MZM electro-optic modulator based on LiNbO3 thin film material has the characteristics of small size, low driving voltage, high bandwidth and low insertion loss. This device can realize the parallel substitution of the traditional bulk material LiNbO3 modulator, and is widely used in broadband optical communication, microwave photonics and other fields.
Figure 1 Typical size outline diagram of LiNbO3 thin film electro-optic modulator chip (chip length~16mm, width ~1.3mm, modulation area length~10mm, optical port channel interval 254um).
2、 Technical specifications
The technical specification requirements are shown in Table 1 below:
Table 1 LiNbO3 thin film electro-optic modulator chip index
|
|
Index name |
Index range |
|
1 |
Optical insertion loss |
≤6dB |
|
2 |
Modulation bandwidth（3dB） |
≥60GHz |
|
3 |
RF half-wave voltage（@40GHz） |
≤5V |
|
4 |
Static half-wave voltage |
≤3V |
|
5 |
Operating wavelength |
1530nm~1565nm |
|
6 |
Extinction ratio |
≥20dB |
|
7 |
RF return loss |
≤-10dB |
|
8 |
Maximum input power |
100mW |
|
9 |
Maximum input RF power |
23dBm |
|
10 |
Thermo-optical bias point half-wave power Pπ |
50mW（The maximum withstand voltage of heater is 10V） |
|
11 |
Operating temperature |
-20℃~50℃ |
|
12 |
Storage temperature |
-40℃~80℃ |
3、 Modulator chip port
Table 2 Modulator Chip port and size
|
|
Name |
Specifications/Size |
|
1 |
Input optical port |
C-band mode spot size is 4 microns |
|
2 |
Output optical port |
C-band mode spot size is 4 microns |
|
3 |
RF PAD |
S-PAD width is 120 microns, and G-S spacing is 40 microns. |
|
4 |
Suggested matching resistance |
38~43 ohms |
