Thin film LiNbO3 IQ electro-optic modulator
1、 Product introduction
The LiNbO3 thin film (LNOI) material on the insulating layer not only inherits the excellent photoelectric properties of the bulk material LiNbO3, but also provides a new scheme for the LiNbO3 modulator chip with integration, small size and high modulation efficiency. A thin-film LiNbO3 electro-optic modulator with broadband and low half-wave voltage is developed based on LNOI material, as shown in Figure 1. The MZM electro-optic modulator based on LiNbO3 thin film material has the characteristics of small size, low driving voltage, high bandwidth and low insertion loss. This device can realize the parallel replacement of the traditional bulk material LiNbO3 modulator, and has a wide range of applications in broadband optical communication, microwave photonics and other fields. The operating bandwidth of the device covers 20GHz, 40GHz and 70GHz, and the operating wavelength can be selected in O, C, L and S bands, providing solutions for special requirements such as ultra-low half-wave voltage, high RF power and high power optical input.
Figure 1 The shape of LNOI-IQ electro-optic modulator, with polarization maintaining fiber as input and 1.85mm female RF connector.
Figure 2 Test the bandwidth of packaged LNOI-IQ electro-optic modulator through 1.85mm RF connector.
2、 Technical specifications
The technical specification requirements are shown in Table 1 below:
Table 1 Index of LiNbO3 Thin Film Electro-optic Modulator
|
|
Index name |
Index range |
|
1 |
Optical insertion loss |
≤6dB |
|
2 |
Modulation bandwidth（3dB） |
≥40GHz |
|
3 |
RF half-wave voltage（@40GHz） |
≤5V |
|
4 |
Static half-wave voltage（@1GHz） |
≤3.2V |
|
5 |
Operating wavelength |
1520nm~1565nm |
|
6 |
Optical return loss |
≤-25dB |
|
7 |
Extinction ratio |
≥18dB |
|
8 |
RF return loss |
≤-10dB |
|
9 |
Maximum input power |
100mW |
|
10 |
Maximum input RF power |
23dBW |
|
11 |
Thermo-optical bias point half-wave power Pπ |
50mW （The maximum withstand voltage of heater is 10V） |
|
12 |
Operating temperature |
-20℃~50℃ |
|
13 |
Storage temperature |
-40℃~80℃ |
3、 Modulator port and size
Table 2 Modulator port and size
|
Name |
Specifications/size |
|
|
1 |
Input fiber (near RF port) |
PM 1550 polarization maintaining fiber，Length 0.6m |
|
2 |
Output fiber |
single mode fiber，Length 0.6m |
|
3 |
Input RF port |
1.85mm female head |
|
4 |
Size of modulator housing (including RF connector) |
≤40mm×20mm×5mm |
|
5 |
Biased electrode |
Three groups (as shown in Figure 1), regardless of positive or negative, the applied voltage range is 0~10V, and it will burn out if it exceeds. |
|
6 |
Monitoring PD |
No |
