1550nm Broadband thin film LiNbO3 electro-optic intensity modulator
1、 Product introduction
The LiNbO3 thin film (LNOI) material on the insulating layer not only inherits the excellent photoelectric properties of the bulk material LiNbO3, but also provides a new scheme for the LiNbO3 modulator chip with integration, small size and high modulation efficiency. Based on LNOI material,Our Research Institute has developed a thin film LiNbO3 electro-optic modulator with broadband and low half-wave voltage, as shown in Figure 1. The MZM electro-optic modulator based on LiNbO3 thin film material has the characteristics of small size, low driving voltage, high bandwidth and low insertion loss. This device can realize the parallel replacement of the traditional bulk material LiNbO3 modulator, and has a wide range of applications in broadband optical communication, microwave photonics and other fields. We have independent LNOI chip design, tape-out, packaging and testing capabilities, and supports customized product requirements. The Operating bandwidth of the device covers 20GHz, 40GHz and 70GHz, and the Operating wavelength can be selected from O, C and L bands, providing solutions for special needs such as ultra-low half-wave voltage, high RF power and high power optical input.
Figure 1 LiNbO3 Shape of thin film electro-optic modulator，The input and output are polarization-maintaining fibers, and the RF connector is a 1.85mm female connector.
Figure 2 Electro-optic response S21 curve of LiNbO3 thin film electro-optic modulator with 3dB bandwidth >50GHz.
2、 Technical specifications
The technical specification requirements are shown in Table 1 below:
Table 1 Index of 1 LiNbO3 Thin Film Electro-optic Modulator
|
|
Index name |
Index range |
|
1 |
Optical insertion loss |
≤5dB |
|
2 |
Modulation bandwidth（3dB） |
≥40GHz |
|
3 |
RF half-wave voltage（@40GHz） |
≤4V |
|
4 |
Static half-wave voltage（@1GHz） |
≤2.8V |
|
5 |
Operating wavelength |
1520nm~1565nm |
|
6 |
Optical return loss |
≤-26dB |
|
7 |
Extinction ratio |
≥20dB |
|
8 |
RF return loss |
≤-10dB |
|
9 |
Maximum input power |
100mW |
|
10 |
Maximum input RF power |
23dBW |
|
11 |
Thermo-optic bias point half-wave power Pπ |
50mW（The maximum withstand voltage of heater is 10V） |
|
12 |
Operating temperature |
-20℃~50℃ |
|
13 |
Storage temperature |
-40℃~80℃ |
3、 Modulator port and size
Table 2 Modulator port and size
|
Name |
Specifications/size |
|
|
1 |
Input fiber(near RF port) |
PM 1550 polarization maintaining fiber，Length 0.6m |
|
2 |
Output fiber |
PM 1550 polarization maintaining fiber，Length 0.6m |
|
3 |
Input RF port |
1.85mm female head |
|
4 |
Size of modulator housing (including RF connector) |
≤40mm×20mm×5mm |
|
5 |
DC pins A、B |
Monitor PD positive and negative poles |
|
6 |
DC pins C、D |
Heater Positive and negative electrodes |
|
7 |
Fixed through hole diameter |
2mm |
4、 Complete physical drawing of the device
