Thin-film lithium niobate (LNOI) Modulator

LNOI refers to a single crystal layer of lithium niobate with a thickness of 300~900nm prepared on heterogeneous base materials such as silicon by Smart-cut process (including ion implantation, transfer bonding, stripping and polishing, etc.). The electro-optic modulator fabricated in LNOI wafer has the advantages of small size, high bandwidth, low Vπ and high integration, which is obviously superior to the traditional electro-optic modulator made of lithium niobate bulk material.

We fabricated hundreds of LNOI electro-optic modulator chips on a 4-inch silicon-based lithium niobate thin film wafer by wafer-level semiconductor process (lithography, thin film deposition, thin film etching, etc.), and tested the microwave transmission performance of the chip traveling wave electrode structure (S21 and S11 curves, VNA cutoff frequency of 14GHz).

In addition to the fabrication process of thin film lithium niobate wafer with nanometer thickness, we can also provide customers with the thickness of lithium niobate wafer.

5~10μm lithium niobate "thick film" integrated optical device products.

Thin film lithium niobate modulator wafer modulator

(4-       inch silicon-based LiNbO₃ film)     

10μm thick lithium niobate thin film

(Silicon substrate, titanium diffusion waveguide)