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Thin film LiNbO3 IQ electro-optic modulator
The LiNbO3 thin film (LNOI) material on the insulating layer not only inherits the excellent photoelectric properties of the bulk material LiNbO3, but also provides a new scheme for the LiNbO3 modulator chip with integration, small size and high modulation efficiency. A thin-film LiNbO3 electro-optic modulator with broadband and low half-wave voltage is developed based on LNOI material, as shown in Figure 1.
넶25 ¥ 0.00 -
1550nm Thin film LiNbO3 electro-optic modulator chip(U type)
The LiNbO3 thin film (LNOI) material on the insulating layer not only inherits the excellent photoelectric properties of the bulk material LiNbO3, but also provides a new scheme for the LiNbO3 modulator chip with integration, small size and high modulation efficiency. As shown in Figure 1. The MZM electro-optic modulator based on LiNbO3 thin film material has the characteristics of small size, low driving voltage, high bandwidth and low insertion loss.
넶20 ¥ 0.00 -
1550nm Broadband thin film LiNbO3 electro-optic intensity modulator
The LiNbO3 thin film (LNOI) material on the insulating layer not only inherits the excellent photoelectric properties of the bulk material LiNbO3, but also provides a new scheme for the LiNbO3 modulator chip with integration, small size and high modulation efficiency. Based on LNOI material,Our Research Institute has developed a thin film LiNbO3 electro-optic modulator with broadband and low half-wave voltage, as shown in Figure 1.
넶26 ¥ 0.00 -
1550nm 60GHz thin film LiNbO3 electro-optic intensity modulator
The LiNbO3 thin film (LNOI) material on the insulating layer not only inherits the excellent photoelectric properties of the bulk material LiNbO3, but also provides a new scheme for the LiNbO3 modulator chip with integration, small size and high modulation efficiency. A thin-film LiNbO3 electro-optic modulator with broadband and low half-wave voltage is developed based on LNOI material, as shown in Figure 1.
넶16 ¥ 0.00 -
Thin-film lithium niobate (LNOI) Modulator
LNOI refers to a single crystal layer of lithium niobate with a thickness of 300~900nm prepared on heterogeneous base materials such as silicon by Smart-cut process (including ion implantation, transfer bonding, stripping and polishing, etc.). The electro-optic modulator fabricated in LNOI wafer has the advantages of small size, high bandwidth, low Vπ and high integration, which is obviously superior to the traditional electro-optic modulator made of lithium niobate bulk material.
넶40 ¥ 0.00 -
Customized Product（LiNbO₃ special integrated optical device）
Relying on our mature preparation technology of LiNbO₃ optical waveguide (titanium diffusion, proton exchange) and comprehensive manufacturing capability (from chip design to device packaging), we provide customized development services for customers, and the products have been applied to many research and development projects such as high-voltage electric field measurement.
넶32 ¥ 0.00
